Title :
Improvement of GaN-based laser diode facets by FIB polishing
Author :
Mack, M.P. ; Via, G.D. ; Abare, A.C. ; Hansen, M. ; Kozodoy, P. ; Keller, S. ; Speck, J.S. ; Mishra, U.K. ; Coldren, L.A. ; DenBaars, S.P.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fDate :
6/25/1998 12:00:00 AM
Abstract :
420 nm metal organic chemical vapour deposition-grown laser diodes were fabricated using Cl2 reactive ion etching to form the facet mirrors. The diodes were subsequently tested under pulsed conditions before and after focused ion beam (FIB) polishing. Ith was reduced from 1.75 to 1.08 A and the differential quantum efficiency (ηd) increased from 1.3% to 2.5% after FIS
Keywords :
III-V semiconductors; gallium compounds; laser mirrors; laser transitions; optical fabrication; optical testing; polishing; semiconductor device testing; semiconductor growth; semiconductor lasers; sputter etching; vapour phase epitaxial growth; 1.3 to 2.5 percent; 1.75 to 1.08 A; 420 nm; Cl2; Cl2 reactive ion etching; FIB polishing; GaN; GaN-based laser diode facets; differential quantum efficiency; facet mirrors; focused ion beam polishing; metal organic chemical vapour deposition-grown laser diodes; pulsed conditions;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980886
