• DocumentCode
    1415962
  • Title

    Improvement of GaN-based laser diode facets by FIB polishing

  • Author

    Mack, M.P. ; Via, G.D. ; Abare, A.C. ; Hansen, M. ; Kozodoy, P. ; Keller, S. ; Speck, J.S. ; Mishra, U.K. ; Coldren, L.A. ; DenBaars, S.P.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
  • Volume
    34
  • Issue
    13
  • fYear
    1998
  • fDate
    6/25/1998 12:00:00 AM
  • Firstpage
    1315
  • Lastpage
    1316
  • Abstract
    420 nm metal organic chemical vapour deposition-grown laser diodes were fabricated using Cl2 reactive ion etching to form the facet mirrors. The diodes were subsequently tested under pulsed conditions before and after focused ion beam (FIB) polishing. Ith was reduced from 1.75 to 1.08 A and the differential quantum efficiency (ηd) increased from 1.3% to 2.5% after FIS
  • Keywords
    III-V semiconductors; gallium compounds; laser mirrors; laser transitions; optical fabrication; optical testing; polishing; semiconductor device testing; semiconductor growth; semiconductor lasers; sputter etching; vapour phase epitaxial growth; 1.3 to 2.5 percent; 1.75 to 1.08 A; 420 nm; Cl2; Cl2 reactive ion etching; FIB polishing; GaN; GaN-based laser diode facets; differential quantum efficiency; facet mirrors; focused ion beam polishing; metal organic chemical vapour deposition-grown laser diodes; pulsed conditions;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19980886
  • Filename
    707214
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1415962