Title :
3.3 V, 50 Mbit/s one-chip Si-bipolar transceiver LSI for optical burst-mode communications
Author :
Ishihara, N. ; Nakamura, M. ; Akazawa, Y.
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
fDate :
6/25/1998 12:00:00 AM
Abstract :
A 3.3 V, 50 Mbit/s one-chip transceiver LSI fabricated by a 4 GHz Si-bipolar process includes an adjustment-free instantaneous response receiver and a laser-diode (LD) driver to build a low-cost optical interface module for FTTD systems. The LSI, assembled with a conventional 0.8 A/W photodiode and 0.2 W/A LD, has an input optical receiver range of -37.8 to 17.0 dBm and an optical average output power of +6 dBm
Keywords :
bipolar integrated circuits; driver circuits; integrated optoelectronics; large scale integration; optical crosstalk; optical fibre subscriber loops; semiconductor lasers; silicon; transceivers; 3.3 V; 4 GHz; FTTD systems; GHz Si-bipolar process; Mbit/s one-chip Si-bipolar transceiver LSI; adjustment-free instantaneous response receiver; input optical receiver range; laser-diode driver; low-cost optical interface module; optical average output power; optical burst-mode communications; photodiode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980925
