Title :
Hybrid integration of GaAs pin-photodiodes with CMOS transimpedance amplifier circuits
Author :
Nakahara, T. ; Tsuda, H. ; Tateno, K. ; Matsuo, S. ; Kurokawa, T.
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
fDate :
6/25/1998 12:00:00 AM
Abstract :
GaAs pin-photodiodes were integrated with 0.8 μm CMOS transimpedance amplifier circuits by means of a wafer-scale hybrid-integration technology using polymide bonding. The capacitance of the integrated photodiode was 50 fF, which included almost no parasitic. Owing to this low capacitance, the hybrid optical receiver operated at a high speed of up to 800 Mbit/s
Keywords :
CMOS integrated circuits; III-V semiconductors; capacitance; gallium arsenide; integrated optoelectronics; optical receivers; p-i-n photodiodes; 0.8 mum; 50 fF; 800 Mbit/s; CMOS transimpedance amplifier circuits; GaAs; GaAs pin-photodiodes; capacitance; high speed; hybrid integration; hybrid optical receiver; integrated photodiode; low capacitance; polymide bonding; wafer-scale hybrid-integration technology;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980928
