Title :
Broadband feedback amplifiers with AlInAs/GalnAs transferred-substrate HBT
Author :
Aganval, B. ; Lee, Q. ; Mensa, D. ; Pullela, R. ; Guthrie, J. ; Rodwell, M.J.W.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fDate :
6/25/1998 12:00:00 AM
Abstract :
Broadband amplifiers with AlInAs/GaInAs transferred-substrate heterojunction bipolar transistors (HBTs) are described. A simple Darlington configuration with resistive feedback has 50 GHz 3 dB bandwidth and 10 dB gain. This high bandwidth results from the high device bandwidth of transferred-substrate HBTs fabricated in an IC process
Keywords :
III-V semiconductors; MMIC amplifiers; aluminium compounds; bipolar MMIC; feedback amplifiers; gallium arsenide; heterojunction bipolar transistors; indium compounds; wideband amplifiers; 10 dB; 50 GHz; AlInAs-GaInAs; Darlington configuration; III-V semiconductors; broadband feedback amplifiers; device bandwidth; fibre-optic transmission systems; microwave communication; resistive feedback; transferred-substrate HBT;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980887
