DocumentCode
1416491
Title
Adaptive grid generation for VSLI device simulation
Author
Coughran, W.M., Jr. ; Pinto, Mark R. ; Smith, R. Kent
Author_Institution
AT&T Bell Lab., Murray Hill, NJ, USA
Volume
10
Issue
10
fYear
1991
fDate
10/1/1991 12:00:00 AM
Firstpage
1259
Lastpage
1275
Abstract
A grid refinement methodology suitable for arbitrary spatial dimensions and geometries is developed. Using just the structural description of a device-specified by the user or taken directly from the output of a process simulator-strategies for creating an initial grid are proposed, embodying whatever knowledge the simulator can have about how the solution will behave. After solving the PDEs, a grid is adapted by examining the local error involved in the discretization process. A set of procedures is proposed for this purpose and shown to be nearly optimal in terms of cost and efficiency. The key to implementing a robust and efficient scheme lies in the choice of a suitable error indicator; it is shown that some of the more obvious candidates can perform quite poorly. The initial grid construction and error indicator schemes are used to show how the full adaptation procedure works on some practical examples
Keywords
VLSI; digital simulation; electronic engineering computing; error analysis; semiconductor device models; VSLI device simulation; adaptive grid generation; discretization process; error indicator; grid refinement methodology; static drift diffusion equations; structural description; Automatic control; Doping profiles; Equations; Geometry; Grid computing; Mesh generation; Process control; Semiconductor device modeling; Solid modeling; Very large scale integration;
fLanguage
English
Journal_Title
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher
ieee
ISSN
0278-0070
Type
jour
DOI
10.1109/43.88922
Filename
88922
Link To Document