Title :
Monte Carlo simulations of high energy electrons and holes in Si-n-MOSFET´s
Author :
Venturi, Franco ; Sangiorgi, Enrico ; Brunetti, Rosella ; Quade, Wolfgang ; Jacoboni, Carlo ; Riccò, Bruno
Author_Institution :
Dept. of Electron., Parma Univ., Bologna, Italy
fDate :
10/1/1991 12:00:00 AM
Abstract :
Monte Carlo simulations of high-energy electrons and holes in Si n-MOSFETs are presented. Key features of this work include the use of a suitable silicon model for carrier transport at high electric fields, an original impact ionization model, and sophisticated numerical techniques to speed up the calculation. The case of submicrometer Si n-MOSFETs is considered as a relevant application
Keywords :
Monte Carlo methods; elemental semiconductors; impact ionisation; insulated gate field effect transistors; semiconductor device models; silicon; Monte Carlo simulations; Si; carrier transport; high electric fields; high energy electrons; impact ionization model; n-MOSFETs; n-channel MOSFET; numerical techniques; submicron devices; Charge carrier processes; Computational modeling; Discrete event simulation; Impact ionization; Jacobian matrices; Monte Carlo methods; Numerical models; Physics; Poisson equations; Silicon;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
