• DocumentCode
    1416501
  • Title

    Electrical properties of thin oxynitrided SiO2 films formed by rapid thermal processing in an N2O ambient

  • Author

    Fukuda, H. ; Yasuda, M. ; Ohno, S.

  • Author_Institution
    Semicond. Technol. Lab., Oki Electr. Ind. Co. Ltd., Tokyo, Japan
  • Volume
    27
  • Issue
    5
  • fYear
    1991
  • Firstpage
    440
  • Lastpage
    441
  • Abstract
    The optimisation of reaction temperature and time has been made in the oxynitridation of SiO2 in N2O by evaluating its dielectric properties at a constant current stress. It is found that N2O-oxynitrided SiO2 films are much improved in both charge trapping density and charge to breakdown when the optimum oxynitridation process (O2, 1100 degrees C, 5 s and following N2O, 1200 degrees C, 25 s) is chosen.
  • Keywords
    annealing; dielectric thin films; metal-insulator-semiconductor structures; nitridation; oxidation; semiconductor technology; 1100 C; 1200 C; 25 s; 5 s; N 2O ambient; RTN; RTO; RTON; SiO xN y; charge to breakdown; charge trapping density; constant current stress; dielectric properties; optimisation of reaction temperature; optimum oxynitridation process; oxynitridation; oxynitrided SiO 2 films; rapid thermal nitridation; rapid thermal oxidation; rapid thermal oxynitridation; rapid thermal processing; reaction time optimisation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910278
  • Filename
    64313
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1416501