Compact Modeling of Perpendicular-Anisotropy CoFeB/MgO Magnetic Tunnel Junctions

Author

Zhang, Yue ; Zhao, Weisheng ; Lakys, Yahya ; Klein, Jacques-Olivier ; Kim, Joo-Von ; Ravelosona, Dafiné ; Chappert, Claude

Author_Institution

Inst. d´´Electron. Fondamentale, Univ. of Paris-Sud 11, Orsay, France

Volume

59

Issue

3

fYear

2012

fDate

3/1/2012 12:00:00 AM

Firstpage

819

Lastpage

826

Abstract

Magnetic tunnel junctions (MTJs) composed of ferromagnetic layers with perpendicular magnetic anisotropy (PMA) are of great interest for achieving high-density nonvolatile memory and logic chips owing to its scalability potential together with high thermal stability. Recent progress has demonstrated a capacity for high-speed performance and low power consumption through current-induced magnetization switching. In this paper, we present a compact model of the CoFeB/MgO PMA MTJ, a system exhibiting the best tunnel magnetoresistance ratio and switching performance. It integrates the physical models of static, dynamic, and stochastic behaviors; many experimental parameters are directly included to improve the agreement of simulation with experimental measurements. Mixed simulation based on the 65-nm technology node of a magnetic flip-flop validates its relevance and efficiency for MTJ/CMOS memory and logic chip design.

Keywords

CMOS memory circuits; cobalt compounds; flip-flops; iron compounds; logic circuits; magnesium compounds; magnetic logic; magnetoresistive devices; random-access storage; tunnelling magnetoresistance; CoFeB-MgO; MTJ-CMOS memory; current-induced magnetization switching; ferromagnetic layers; high thermal stability; high-density nonvolatile memory; logic chip design; low power consumption; magnetic flip-flop; perpendicular-anisotropy magnetic tunnel junctions; size 65 nm; stochastic behaviors; switching performance; tunnel magnetoresistance ratio; CMOS integrated circuits; Integrated circuit modeling; Magnetic tunneling; Mathematical model; Semiconductor device modeling; Switches; Tunneling magnetoresistance; Compact modeling; magnetic tunnel junction (MTJ); perpendicular magnetic anisotropy (PMA); spin transfer torque (STT);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2011.2178416

Filename

6125245