Title :
Sub-1-dB Noise Figure Performance of High-Power Field-Plated GaN HEMTs
Author :
Moon, J.S. ; Wong, D. ; Hashimoto, P. ; Hu, M. ; Milosavljevic, I. ; Willadsen, P. ; McGuire, C. ; Burnham, S. ; Micovic, M. ; Wetzel, M. ; Chow, D.
Author_Institution :
HRL Labs. LLC, Malibu, CA, USA
fDate :
3/1/2011 12:00:00 AM
Abstract :
In this letter, we report the state-of-the-art micro wave noise performance of discrete 0.15-μm-gate-length field plated (FP) GaN HEMTs. The FP GaN HEMTs yielded a peak fτ/fmax of 60 GHz/150 GHz at Vds = 10 V. An fmax of 230 GHz was obtained at Vds = 20 V. At 2.5 V, the source-drain bias and dc power dissipation of 200 mW/mm, a minimum noise figure (NFmin) of 0.89 dB, and an associated gain (AG) of 11 dB were measured at 10 GHz. At 20 GHz the NFmin and AG were 1.9 and 6.2 dB, respectively. The sub-1-dB microwave noise performance at 10 GHz is the best ever reported for FP high-power GaN HEMTs, which can be attributed to their lateral scaling and deep-submicrometer gate lengths.
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; microwave field effect transistors; millimetre wave field effect transistors; wide band gap semiconductors; DC power dissipation; GaN; deep-submicrometer gate lengths; frequency 10 GHz; frequency 150 GHz; frequency 20 GHz; frequency 230 GHz; frequency 60 GHz; gain 1.9 dB; gain 11 dB; gain 6.2 dB; gate-length field plated GaN HEMT; high-power field-plated GaN HEMT; microwave noise performance; noise figure 0.89 dB; noise figure performance; size 0.15 mum; source-drain bias; voltage 10 V; voltage 2.5 V; voltage 20 V; $f_{max}$ ; Field plated (FP); GaN HEMT; noise figure;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2095408
