DocumentCode :
1416682
Title :
Study of Electrical Characteristics of GaN-Based Photovoltaics With Graded In 
Ga 
N
Author :
Lee, Han Cheng ; Su, Yan Kuin ; Lan, Wen How ; Lin, Jia Ching ; Huang, Kuo Chin ; Lin, Wen Jen ; Cheng, Yi Cheng ; Yeh, Yu Han
Author_Institution :
AU Optronics Corp., Taichung, Taiwan
Volume :
23
Issue :
6
fYear :
2011
fDate :
3/15/2011 12:00:00 AM
Firstpage :
347
Lastpage :
349
Abstract :
GaN-based photovoltaics (PVs) with a graded InxGa1-xN absorption layer (GIAL) were investigated. Compared to PVs with a single InGaN absorption layer (SIAL), the leakage current and carrier transportation could be improved in the PVs with a GIAL, which was attributed to the reduction of lattice mismatch and improvement of band offset, respectively. Under AM 1.5G one-sun illumination, the open-circuit voltage and short-circuit current density of the PVs with a GIAL were 1.33 V and 5.9 × 10-4 A/cm2, respectively, while the fill factor and power conversion efficiency were 65% and 0.51%, respectively. The efficiency of PVs with a GIAL is much higher than that of PVs with a SIAL.
Keywords :
III-V semiconductors; current density; indium compounds; leakage currents; photovoltaic cells; semiconductor devices; short-circuit currents; wide band gap semiconductors; GaN-InxGa1-xN; band offset; carrier transportation; electrical characteristics; fill factor; graded absorption layer; leakage current; one-sun illumination; open-circuit voltage; photovoltaic device; power conversion efficiency; short-circuit current density; Graded $hbox{In}_{x}hbox{Ga}_{1-{x}}hbox{N}$ absorption layer (GIAL); photovoltaics (PVs); single InGaN absorption layer (SIAL);
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2010.2103304
Filename :
5678624
Link To Document :
