Title :
Surface-emitting lasers with GaAlAs/AlAs DBR grown by OMVPE
Author :
Ibaraki, A. ; Kawashima, Kimiko ; Ishikawa, Takaaki ; Yamaguchi, Toru ; Niina, T. ; Ohara, Shinya
Author_Institution :
Sanyo Electr. Co. Ltd., Osaka
fDate :
12/1/1988 12:00:00 AM
Abstract :
The performance of surface-emitting (SE) lasers with a Ga0.9 Al0.1As/AlAs multilayer Bragg reflector grown by OMVPE (organometallic vapor-phase epitaxy) has been investigated. The reflectivity was 94% at a wavelength of 0.88 μm, which is the lasing wavelength of the GaAs/GaAlAs SE laser. No sophisticated etching process for the GaAs substrate was necessary for inside mirror formation. An Au/SiO2 semitransparent mirror, the reflectivity and transparency of which are about 94 and 3%, respectively, was used for a p-side reflector. Operating under a room-temperature pulsed condition, the lasers have a minimum threshold current of 95 mA and a lasing wavelength of 883 nm. The spectrum at I/Ith=0.99 has two peaks. One, around 883 nm, is a lasing longitudinal mode, and the other, a small peak at around 870 nm, is a nonlasing neighboring longitudinal mode. Thus the longitudinal mode spacing is about 13 nm. Single-mode operation up to 1.22 times the threshold value was obtained
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; gold; laser cavity resonators; mirrors; semiconductor growth; semiconductor junction lasers; silicon compounds; vapour phase epitaxial growth; 870 nm; 883 nm; 94 percent; 95 mA; As-AlAs; OMVPE; inside mirror formation; lasing wavelength; longitudinal mode spacing; multilayer Bragg reflector; organometallic vapor-phase epitaxy; reflectivity; room-temperature pulsed condition; semiconductors; spectrum; surface emitting lasers; threshold current; transparency; Distributed Bragg reflectors; Epitaxial growth; Etching; Gallium arsenide; Gold; Mirrors; Nonhomogeneous media; Reflectivity; Substrates; Surface emitting lasers;
Journal_Title :
Electron Devices, IEEE Transactions on
