DocumentCode :
1416733
Title :
Analysis of semiconductor laser arrays with high-intensity uniformity
Author :
Buus, Jens
Author_Institution :
Plessey Res. Caswell Ltd., Towcester, UK
Volume :
24
Issue :
1
fYear :
1988
fDate :
1/1/1988 12:00:00 AM
Firstpage :
22
Lastpage :
28
Abstract :
It is shown that an array with a highly uniform intensity distribution can be constructed. This decreases the spatial hole burning and makes stable, high-power operation easier. An estimate of the remaining spatial hole burning is derived and it is shown how its effects can be compensated for. It is considered that laser arrays which operate in the fundamental mode even at high-power levels can be designed
Keywords :
laser theory; optical hole burning; semiconductor junction lasers; fundamental mode; high-intensity uniformity; semiconductor laser arrays; spatial hole burning; stable high-power operation; Charge carrier density; Chirp; Laser beams; Laser modes; Laser theory; Optical arrays; Optical coupling; Optical design; Phased arrays; Semiconductor laser arrays;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.89
Filename :
89
Link To Document :
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