• DocumentCode
    1416747
  • Title

    Field Dependence of Porous Low- k Dielectric Breakdown as Revealed by the Effects of Line Edge Roughness on Failure Distributions

  • Author

    Lee, S.C. ; Oates, A.S. ; Chang, K.M.

  • Author_Institution
    Taiwan Semicond. Manuf. Co., Hsinchu, Taiwan
  • Volume
    11
  • Issue
    1
  • fYear
    2011
  • fDate
    3/1/2011 12:00:00 AM
  • Firstpage
    201
  • Lastpage
    203
  • Abstract
    We investigate the electric field (E) dependence of the breakdown of porous low-k dielectrics by measuring the changes in the failure time distribution resulting from the presence of line edge roughness. We show that the Weibull β increases with decreasing field, clearly demonstrating that dielectric breakdown does not exhibit 1/E or E-n characteristics.
  • Keywords
    electric breakdown; porous semiconductors; surface roughness; electric field dependence; failure time distribution; line edge roughness; porous low-k dielectric breakdown; Cu/low-$k$ interconnect reliability; line edge roughness (LER); time-dependent dielectric breakdown (TDDB);
  • fLanguage
    English
  • Journal_Title
    Device and Materials Reliability, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1530-4388
  • Type

    jour

  • DOI
    10.1109/TDMR.2010.2103316
  • Filename
    5678634
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1416747