DocumentCode :
1416761
Title :
Color Range Images Captured by a Four-Phase CMOS Image Sensor
Author :
Lin, Dong-Long ; Wang, Ching-Chun ; Wei, Chia-Ling
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume :
58
Issue :
3
fYear :
2011
fDate :
3/1/2011 12:00:00 AM
Firstpage :
732
Lastpage :
739
Abstract :
As 3-D displays become more common, the demand for 3-D-related products is rapidly increased. Three-dimensional image sensors based on the time-of-flight (TOF) technique are one of these products and are applied to many applications. In this paper, a new pixel based on the continuous-wave modulation method was proposed to measure the TOF and was embedded in a test complementary metal-oxide-semiconductor (CMOS) image sensor. Compared with other range imagers, no complex control signals, high operating voltage, or multilevel control voltages are needed in this pixel. The chip, with 92 × 30 pixels, was fabricated using the Taiwan Semiconductor Manufacturing Company´s 0.18-μm CMOS standard process, and a time-switched color measurement was applied to this rangeflnder system. A pulse train of red, green, and blue lights is emitted sequentially from a light-emitting diode array. The distance is easily calculated from the phase differences, and the color information is estimated using the difference in reflection coefficients under a different light. The measured distance and color are compared with the actual dis tance and color-corrected images. A color range image with a distance error of 3.56 cm and an L*a*b color difference of 40.23 can be observed. This rangefinder system provides a new perspective to capturing a colored range image.
Keywords :
CMOS image sensors; LED displays; distance measurement; image colour analysis; three-dimensional displays; 3D display; CMOS standard process; TOF measurement; Taiwan semiconductor manufacturing company; color corrected image; color range image; complex control signal; continuous wave modulation method; distance measurement; four phase CMOS image sensor; light emitting diode array; metal oxide semiconductor image sensor; multilevel control voltage; rangefinder system; reflection coefficient; three dimensional image sensor; time switched color measurement; time-of-flight technique; Color range image; complementary metal–oxide–semiconductor (CMOS) image sensor; three-dimensional (3-D); time of flight (TOF);
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2010.2095857
Filename :
5678637
Link To Document :
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