Schottky metal-semiconductor-metal photodetectors on GaN films grown on sapphire by molecular beam epitaxy

Author

Wang, S. ; Li, T. ; Reifsnider, J.M. ; Yang, B. ; Collins, C. ; Holmes, A.L., Jr. ; Campbell, J.C.

Author_Institution

Microelectron. Res. Center, Texas Univ., Austin, TX, USA

Volume

36

Issue

11

fYear

2000

Firstpage

1262

Lastpage

1266

Abstract

We report high-performance back-to-back Schottky metal-semiconductor-metal photodetectors fabricated on GaN epitaxial layers grown by molecular beam epitaxy. The photodetectors exhibit very low dark current (<1 pA at 30 V) and high external quantum efficiency (>70%). Medici simulation of the depletion region width indicated an absence of photoconductive gain. The temporal response has also been characterized.

Keywords

III-V semiconductors; Schottky diodes; gallium compounds; metal-semiconductor-metal structures; molecular beam epitaxial growth; optical films; photodetectors; ultraviolet detectors; 1 pA; 30 V; GaN; GaN epitaxial layers; GaN films; Schottky metal-semiconductor-metal photodetectors; back-to-back Schottky metal-semiconductor-metal photodetectors; depletion region width; high external quantum efficiency; medici simulation; molecular beam epitaxy; sapphire; temporal response; very low dark current; Dark current; Epitaxial growth; Epitaxial layers; Gallium nitride; Molecular beam epitaxial growth; PIN photodiodes; Photoconducting materials; Photoconductivity; Photodetectors; Substrates;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.890266

Filename

890266