High Power Density Performances of SiGe HBT From BiCMOS Technology at W-Band

Author

Pottrain, Alexandre ; Lacave, Thomas ; Ducatteau, Damien ; Gloria, Daniel ; Chevalier, Pascal ; Gaquiére, Christophe

Author_Institution

STMicroelectron., Crolles, France

Volume

33

Issue

2

fYear

2012

Firstpage

182

Lastpage

184

Abstract

In this letter, we report load pull measurements on SiGe HBTs at 94 GHz. Nowadays, this kind of device exhibits F_MAX above 400 GHz and thus has a growing interest for W-band applications. A load pull test bench is developed for the characterization of this device with special care on architecture and calibration procedure for accurate measurements in 75-110 GHz. The device was characterized under large signal operation showing attractive performance for power amplifier design. A state-of-the-art power density of 18.5 mW/μm² at 1-dB compression has been obtained at 94 GHz.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; power amplifiers; semiconductor device measurement; semiconductor materials; BiCMOS technology; SiGe HBT; W-band application; calibration procedure; frequency 75 GHz to 110 GHz; frequency 94 GHz; high power density performance; load pull test bench; power amplifier design; signal operation; state-of-the-art power density; BiCMOS integrated circuits; Heterojunction bipolar transistors; Performance evaluation; Power generation; Power measurement; Silicon; Silicon germanium; BiCMOS; SiGe HBTs; W-band; load pull;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2177631

Filename

6125976