Title :
High-efficiency GaAs/Ge monolithic tandem solar cells
Author :
Tobin, Stephen P. ; Vernon, S.M. ; Bajgar, C. ; Haven, V.E. ; Geoffroy, L.M. ; Lillington, D.R.
Author_Institution :
Spire Corp., Bedford, MA, USA
fDate :
5/1/1988 12:00:00 AM
Abstract :
Tandem cells of GaAs grown by metalorganic chemical vapor deposition (MOCVD) on thin Ge to address both higher efficiency and reduced weight are discussed. GaAs/Ge monolithic tandem cells of 4-cm/sup 2/ area have been produced with independently verified efficiencies up to 21.7% (AM0, one sun, 25 degrees C, total area). Under AM1.5 global conditions, efficiencies are up to 24.3%. These are believed to be the highest one-sun efficiencies reported for GaAs/Ge cells, and the highest efficiency for a two-terminal monolithic tandem cell.<>
Keywords :
III-V semiconductors; elemental semiconductors; gallium arsenide; germanium; semiconductor growth; solar cells; vapour phase epitaxial growth; 21.7 percent; 24.3 percent; 25 degC; AM0; AM1.5 global conditions; GaAs-Ge; Ge; MOCVD; high efficiency; metalorganic chemical vapor deposition; monolithic tandem solar cells; one-sun efficiencies; Gallium arsenide; Gold; MOCVD; Photonic band gap; Photovoltaic cells; Photovoltaic systems; Solar power generation; Space vehicles; Substrates; Sun;
Journal_Title :
Electron Device Letters, IEEE
