DocumentCode :
1417118
Title :
An Effective Correction Methodology for Interference of Stress-Induced Leakage Current in TDDB Evaluation of High- 
Dielectrics
Author :
Wu, Ernest Y.
Author_Institution :
Microelectron. Div., Semicond. R&D Center, IBM, Essex Junction, VT, USA
Volume :
33
Issue :
2
fYear :
2012
Firstpage :
191
Lastpage :
193
Abstract :
A simple and effective correction methodology for interference of stress-induced leakage current (SILC) in time-dependent-dielectric-breakdown (TDDB) evaluation of high-k dielectrics is reported. Unlike the violation of weakest link failure property found in conventional TDDB evaluation with SILC interference, we have demonstrated that time-to-failure distributions obtained with this new methodology restores this universal property. Excellent results in terms of improved time to failure and Weibull slope were obtained, thus providing a realistic TDDB projection. The algorithm of this methodology is easy to implement and can be used in daily TDDB evaluation.
Keywords :
dielectric materials; electric breakdown; leakage currents; TDDB evaluation; Weibull slope; effective correction methodology; high-k dielectrics; stress-induced leakage current; time-dependent-dielectric-breakdown evaluation; time-to-failure distribution; Current measurement; Dielectrics; High K dielectric materials; Leakage current; Logic gates; Stress; Transient analysis; Breakdown; high-$k$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2011.2177957
Filename :
6125978
Link To Document :
