DocumentCode :
1417275
Title :
Performance of strained InGaAs/InAlAs multiple-quantum-well electroabsorption modulators
Author :
Ido, Tatemi ; Sano, Hirohisa ; Tanaka, Shigehisa ; Moss, David J. ; Inoue, Hiroaki
Author_Institution :
Central Res. Lab., Hitachi Ltd., Kokubunji, Japan
Volume :
14
Issue :
10
fYear :
1996
fDate :
10/1/1996 12:00:00 AM
Firstpage :
2324
Lastpage :
2331
Abstract :
The performance of a strained InGaAs/InAlAs multiple-quantum-well (MQW) electroabsorption (EA) modulator was evaluated theoretically and experimentally, The theoretical analysis showed that adding tensile strain to the InGaAs wells widens the wells and reduces the driving voltage; it also showed that adding compressive strain to the InAlAs barriers reduces the band discontinuities and increases the optical saturation power. A fabricated InGaAs/InAlAs MQW modulator with tensile strain in the wells and compressive strain in the barriers had a large modulation bandwidth (f3 dB>20 GHz) and a lower driving voltage (V15 dB=1.2 V) compared to an unstrained InGaAs/InAlAs MQW modulator, so it had a higher modulation efficiency (17 GHz/V). This strained MQW modulator produced a 10 Gb/s optical signal with a clear eye opening and small chirping (αeff=0.6). Moreover, it had shorter carrier escape times, so it has better optical saturation behavior. Introducing strain thus significantly improves the performance of the MQW-EA modulators
Keywords :
III-V semiconductors; aluminium compounds; chirp modulation; electro-optical modulation; electroabsorption; gallium arsenide; high-speed optical techniques; indium compounds; optical saturation; optical transmitters; semiconductor heterojunctions; semiconductor quantum wells; 1.2 V; 1.5 mum; 10 Gbit/s; 20 GHz; InAlAs barriers; InGaAs wells; InGaAs-InAlAs; InGaAs/InAlAs; band discontinuities; chirping; compressive strain; driving voltage; escape times; eye opening; modulation bandwidth; modulation efficiency; multiple-quantum-well electroabsorption modulators; optical saturation behavior; optical saturation power; optical signal; tensile strain; Bandwidth; Chirp modulation; Indium compounds; Indium gallium arsenide; Optical modulation; Optical saturation; Performance analysis; Quantum well devices; Tensile strain; Voltage;
fLanguage :
English
Journal_Title :
Lightwave Technology, Journal of
Publisher :
ieee
ISSN :
0733-8724
Type :
jour
DOI :
10.1109/50.541224
Filename :
541224
Link To Document :
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