A fully integrated SiGe receiver IC for 10-Gb/s data rate

Author

Greshishchev, Yuriy M. ; Schvan, Peter ; Showell, Jonathan L. ; Xu, Mu-Liang ; Ojha, Jugnu J. ; Rogers, Jonathan E.

Author_Institution

Nortel Networks, Ottawa, Ont., Canada

Volume

35

Issue

12

fYear

2000

Firstpage

1949

Lastpage

1957

Abstract

A silicon germanium (SiGe) receiver IC is presented here which integrates most of the 10-Gb/s SONET receiver functions. The receiver combines an automatic gain control and clock and data recovery circuit (CDR) with a binary-type phase-locked loop, 1:8 demultiplexer, and a 2/sup 7/-1 pseudorandom bit sequence generator for self-testing. This work demonstrates a higher level of integration compared to other silicon designs as well as a CDR with SONET-compliant jitter characteristics. The receiver has a die size of 4.5/spl times/4.5 mm2 and consumes 4.5 W from -5 V.

Keywords

Ge-Si alloys; SONET; automatic gain control; demultiplexing equipment; digital phase locked loops; integrated optoelectronics; optical receivers; semiconductor materials; synchronisation; timing jitter; -5 V; 10 Gbit/s; 4.5 W; SONET receiver functions; SiGe; automatic gain control; binary-type phase-locked loop; clock and data recovery circuit; demultiplexer; die size; jitter characteristics; pseudorandom bit sequence generator; receiver IC; Built-in self-test; Circuits; Clocks; Gain control; Germanium silicon alloys; Jitter; Phase locked loops; SONET; Silicon germanium; Voltage-controlled oscillators;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.890309

Filename

890309