2-GHz RF front-end circuits in CMOS/SIMOX operating at an extremely low voltage of 0.5 V

Author

Harada, Mitsuru ; Tsukahara, Tsuneo ; Kodate, Junichi ; Yamagishi, Akihiro ; Yamada, Junzo

Author_Institution

Low-Energy Electron. Lab., Nippon Telegraph & Telephone Corp., Kanagawa, Japan

Volume

35

Issue

12

fYear

2000

Firstpage

2000

Lastpage

2004

Abstract

2-GHz RF front-end circuits [low noise amplifier (LNA), mixer, and voltage-controlled oscillator (VCO)] enabling 0.5-V operation are presented. The circuits were fabricated by 0.2-/spl mu/m fully depleted CMOS/SIMOX technology. The mixer has an LC-tuned folded structure to avoid stacking transistors. Undoped-channel MOSFETs are used in the VCO core and in a complementary source follower as output buffers for the mixer and the VCO. The noise figures of 3.5 dB (LNA) and 16.1 dB (mixer), IIP3 of -6-dBm (mixer), and phase noise of -110 dBc/Hz at 1-MHz offset (VCO) are achieved at a supply voltage of 1 V. They dissipate 2 mW (LNA), 4 mW (mixer), and 3 mW (VCO) at 0.5.

Keywords

CMOS analogue integrated circuits; SIMOX; UHF amplifiers; UHF integrated circuits; UHF mixers; UHF oscillators; circuit tuning; phase noise; voltage-controlled oscillators; 0.2 micron; 0.5 V; 1 V; 16.1 dB; 2 GHz; 2 mW; 3 mW; 3.5 dB; 4 mW; IIP3; LC-tuned folded structure; RF front-end circuits; Si; complementary source follower; fully depleted CMOS/SIMOX technology; low noise amplifier; mixer; output buffers; phase noise; supply voltage; undoped-channel MOSFETs; voltage-controlled oscillator; CMOS technology; Circuit noise; Low-noise amplifiers; MOSFETs; Noise figure; Operational amplifiers; Radio frequency; Radiofrequency amplifiers; Stacking; Voltage-controlled oscillators;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.890316

Filename

890316