DocumentCode :
1417443
Title :
Electric-Field-Driven Degradation in off-State Step-Stressed AlGaN/GaN High-Electron Mobility Transistors
Author :
Chang, Chih-Yang ; Douglas, E.A. ; Kim, Jinhyung ; Lu, Liu ; Lo, Chien-Fong ; Chu, Byung-Hwan ; Cheney, D.J. ; Gila, B.P. ; Ren, F. ; Via, G.D. ; Cullen, David A. ; Zhou, Lin ; Smith, David.J. ; Jang, Soohwan ; Pearton, S.J.
Author_Institution :
Dept. of Mater. Sci. & Eng., Univ. of Florida, Gainesville, FL, USA
Volume :
11
Issue :
1
fYear :
2011
fDate :
3/1/2011 12:00:00 AM
Firstpage :
187
Lastpage :
193
Abstract :
The critical degradation voltage of AlGaN/GaN high-electron mobility transistors during off-state electrical stress was determined as a function of Ni/Au gate dimensions (0.1-0.17 μm), drain bias voltage, and source/drain-gate contact distance. Devices with different gate lengths and gate-drain distances were found to exhibit the onset of degradation at different source-drain biases but similar electric field strengths, showing that the degradation mechanism is primarily field driven. The degradation field was calculated to be ~ 1.8 MV/cm by Automatically Tuned Linear Algebra Software simulations. Transmission electron microscopy imaging showed creation of defects under the gate after dc stress.
Keywords :
aluminium compounds; gallium compounds; gold; high electron mobility transistors; nickel; transmission electron microscopy; AlGaN-GaN; HEMT; Ni-Au; automatically tuned linear algebra software simulations; drain bias voltage; electric field strengths; electric-field-driven degradation; gate lengths; gate-drain distances; off-state step-stressed high-electron mobility transistors; size 0.1 mum to 0.17 mum; source-drain-gate contact distance; transmission electron microscopy imaging; AlGaN; GaN; degradation; high-electron mobility transistor (HEMT);
fLanguage :
English
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
Publisher :
ieee
ISSN :
1530-4388
Type :
jour
DOI :
10.1109/TDMR.2010.2103314
Filename :
5678846
Link To Document :
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