• DocumentCode
    1417624
  • Title

    Single-Switch High Step-Up Converters With Built-In Transformer Voltage Multiplier Cell

  • Author

    Deng, Yan ; Rong, Qiang ; Li, Wuhua ; Zhao, Yi ; Shi, Jianjiang ; He, Xiangning

  • Author_Institution
    Coll. of Electr. Eng., Zhejiang Univ., Hangzhou, China
  • Volume
    27
  • Issue
    8
  • fYear
    2012
  • Firstpage
    3557
  • Lastpage
    3567
  • Abstract
    In this paper, a built-in voltage gain extension cell is proposed to give a universal topology derivation on next-generation high step-up converters for large voltage gain conversion systems. Several improved single-switch high step-up converters with built-in transformer voltage multiplier cell are derived with some advantageous performance, which includes extremely large voltage conversion ratio, minimized power device voltage stress, effective diode reverse-recovery alleviation, and soft-switching operation. The turns ratio of the built-in transformer can be employed as another design freedom to extend the voltage gain, which shows great design flexibility. Compared with their active clamp counterpart, only one MOSFET is required to simplify the circuit configuration and improve the system reliability. The over resonance frequency and the below resonance frequency operation modes are studied to explore the circuit performance, and the key parameter design criterion is provided to show a valuable guidance for future industrial applications. Finally, the experimental results from a 500 W 36-380 V prototype are provided to validate the effectiveness of the main contributions in this paper.
  • Keywords
    MOSFET; circuit reliability; diodes; network topology; power convertors; transformers; voltage multipliers; zero current switching; zero voltage switching; MOSFET; active clamp; built-in transformer voltage multiplier cell; built-in voltage gain extension cell; diode reverse-recovery alleviation; extremely large voltage conversion ratio; key parameter design criterion; large voltage gain conversion system; next-generation single-switch high step-up converter; power 50 W; power device voltage stress minimization; resonance frequency operation mode; soft-switching operation; system reliability; universal topology derivation; voltage 36 V to 380 V; Capacitors; Clamps; Inductance; Inductors; Stress; Switches; Voltage control; Built-in transformer; high step-up; voltage gain extension cell; voltage multiplier cell;
  • fLanguage
    English
  • Journal_Title
    Power Electronics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0885-8993
  • Type

    jour

  • DOI
    10.1109/TPEL.2012.2183620
  • Filename
    6126054