DocumentCode
1417735
Title
Carrier-Mobility Enhancement via Strain Engineering in Future Thin-Body MOSFETs
Author
Xu, Nuo ; Ho, Byron ; Andrieu, François ; Smith, Lee ; Nguyen, Bich-yen ; Weber, Olivier ; Poiroux, Thierry ; Faynot, Olivier ; Liu, Tsu-Jae King
Author_Institution
Electr. Eng. & Comput. Sci. Dept., Univ. of California, Berkeley, CA, USA
Volume
33
Issue
3
fYear
2012
fDate
3/1/2012 12:00:00 AM
Firstpage
318
Lastpage
320
Abstract
The impact of body-thickness scaling on strain-induced carrier-mobility enhancement in thin-body CMOSFETs with high-k/metal gate stacks, based on quantum-mechanical simulations calibrated with measured data, is presented to provide insight into device performance enhancement trends for future technology nodes.
Keywords
MOSFET; carrier mobility; body-thickness scaling impact; high-k-metal gate stack; quantum-mechanical simulation calibration; strain engineering; strain-induced carrier-mobility enhancement; thin-body CMOSFET; FinFETs; High K dielectric materials; Logic gates; Silicon; Stress; Carrier mobility; FinFET; fully depleted silicon-on-insulator (FD-SOI); high-k/metal gate; strain; ultra thin body and BOX;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2011.2179113
Filename
6126070
Link To Document