A Subthreshold Swing Model for Thin-Film Fully Depleted SOI Four-Gate Transistors

Author

Sayed, Shehrin ; Hossain, Md Iftekhar ; Khan, M. Ziaur Rahman

Author_Institution

Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh

Volume

59

Issue

3

fYear

2012

fDate

3/1/2012 12:00:00 AM

Firstpage

854

Lastpage

857

Abstract

A mathematical model is developed to determine the subthreshold swing of thin-film fully depleted silicon-on-insulator four-gate transistors (G⁴-FETs). The model is developed using a 2-D model of potential distribution that was derived from 2-D Poisson´s equation. Study reveals that the subthreshold swing is a strong function of back-surface charge condition and depends on structural parameters of the device. Excellent agreement with 3-D device simulations is observed.

Keywords

Poisson equation; semiconductor device models; silicon-on-insulator; thin film transistors; 2D Poisson\´s equation; 2D model; 3D device simulations; Si; back-surface charge condition; mathematical model; silicon-on-insulator; structural parameters; subthreshold swing model; thin-film fully depleted SOI four-gate transistors; Capacitance; Couplings; Electric potential; Junctions; Logic gates; Silicon; Transistors; 2-D potential distribution; $hbox{G}^{4}$ -FET; Body factor; subthreshold swing;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2011.2180023

Filename

6126074