DocumentCode :
1417774
Title :
Low-Frequency Noise in Oxide-Based 
Resistive Random Access Memory Cells
Author :
Fang, Z. ; Yu, H.Y. ; Chroboczek, J.A. ; Ghibaudo, G. ; Buckley, J. ; DeSalvo, B. ; Li, X. ; Kwong, D.L.
Author_Institution :
Inst. of Microelectron., Agency for Sci., Technol. & Res. (A*STAR), Singapore, Singapore
Volume :
59
Issue :
3
fYear :
2012
fDate :
3/1/2012 12:00:00 AM
Firstpage :
850
Lastpage :
853
Abstract :
In this brief, low-frequency noise (LFN) characteristics are studied in oxide-based (TiN/HfOx/Pt) resistive random access nemory cells having different dimensions. It is confirmed that, for the low resistance state (LRS), current conduction is localized without an area dependence, whereas for the high resistance state, it is a uniform leakage current throughout the whole device area. An LFN model is proposed for the filamentary LRS based on the carrier number fluctuation approach, allowing physical analysis of filament characteristics and the surrounding trap concentration.
Keywords :
CMOS memory circuits; carrier density; electron traps; hafnium compounds; hole traps; integrated circuit noise; leakage currents; platinum compounds; random-access storage; titanium compounds; TiN-HfOx-Pt; carrier number fluctuation; current conduction; leakage current; low frequency noise; low resistance state; oxide based resistive random access memory cells; trap concentration; Current measurement; Hafnium compounds; Low-frequency noise; Resistance; Switches; Tin; Current conduction; filament noise model; low-frequency noise (LFN); resistive random access memory (RRAM);
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2011.2178245
Filename :
6126075
Link To Document :
