Title :
Characteristics of a In0.52(AlxGa1-x )0.48As/In0.53Ga0.47 As(0⩽x⩽1) heterojunction and its application on HEMT´s
Author :
Chan, Yi-Jen ; Wu, Chia-Song ; Chen, Chun-Hung ; Shieh, Jia-Lin ; Chyi, Jen-Inn
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
fDate :
5/1/1997 12:00:00 AM
Abstract :
The quaternary In0.52(AlxGa1-x) 0.48As compound on InP substrates is an important material for use in optoelectronic and microwave devices. We systematically investigated the electrical properties of quaternary In0.52(AlxGa1-x)0.48As layers, and found a 10% addition of Ga atoms into the InAlAs layer improves the Schottky diode performance. The energy bandgap (Eg ) for the In0.52(AlxGa1-x)0.48As layer was (0.806+0.711x) eV, and the associated conduction-band discontinuity (ΔEc), in the InAlGaAs/In0.53Ga0.47 As heterojunction, was around (0.68±0.01)ΔEg . Using this high quality In0.52(Al0.9Ga0.1)0.48As layer in the Schottky and buffer layers, we obtained quaternary In0.52(Al0.9Ga0.1)0.48As/In 0.53Ga0.47As HEMTs. This quaternary HEMT revealed excellent dc and microwave characteristics. In comparison with the conventional InAlAs/InGaAs HEMT´s, quaternary HEMT´s demonstrated improved sidegating and device reliability
Keywords :
III-V semiconductors; Schottky diodes; aluminium compounds; conduction bands; energy gap; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device reliability; semiconductor heterojunctions; DC characteristics; HEMT; In0.52(AlGa)0.48As-In0.53Ga 0.47As; Schottky diode; buffer layer; conduction-band discontinuity; device reliability; electrical properties; energy bandgap; heterojunction; microwave characteristics; quaternary compound; sidegating; Atomic layer deposition; Buffer layers; HEMTs; Heterojunctions; Indium compounds; Indium phosphide; MODFETs; Microwave devices; Photonic band gap; Schottky diodes;
Journal_Title :
Electron Devices, IEEE Transactions on
