DocumentCode :
1417796
Title :
Small-signal distributed model for GaAs HBT´s and S-parameter prediction at millimeter-wave frequencies
Author :
Hajji, Rached ; Ghannouchi, Fadhel M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Ecole Polytech. de Montreal, Que., Canada
Volume :
44
Issue :
5
fYear :
1997
fDate :
5/1/1997 12:00:00 AM
Firstpage :
723
Lastpage :
732
Abstract :
The development of a new Heterojunction Bipolar Transistor (HBT) distributed electrical model suitable for millimeter-wave applications is reported. Each section of the distributed model is composed of an active slice, modeled as an intrinsic HBT, and connected to other slices through a passive connecting network. It is shown that, for large size and high power HBT´s, a distributed model is more accurate than a lumped-element one. This is confirmed by comparing the S-parameters calculated using both models to the measured data over a wide frequency band. It is also shown that the distributed model allows accurate prediction of S-parameter behavior at higher frequencies where the lumped model may not have accurate prediction
Keywords :
III-V semiconductors; S-parameters; distributed parameter systems; gallium arsenide; heterojunction bipolar transistors; millimetre wave bipolar transistors; semiconductor device models; GaAs; GaAs HBT; S-parameters; active slice; distributed electrical model; high power HBT; intrinsic HBT model; millimeter-wave frequencies; passive connecting network; small-signal distributed model; Circuits; Electrodes; Frequency measurement; Gallium arsenide; Harmonic analysis; Heterojunction bipolar transistors; Millimeter wave transistors; Power generation; Predictive models; Scattering parameters;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.568032
Filename :
568032
Link To Document :
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