Title :
Grasping SOI floating-body effects
Author :
Krishnan, Srinath ; Fossum, Jerry G.
Author_Institution :
Technol. Dev. Group, AMD, Sunnyvale, CA, USA
fDate :
7/1/1998 12:00:00 AM
Abstract :
It is important to understand what the floating-body effects are and how they affect device and circuit behavior. In this regard, this article qualitatively explains the device physics underlying DC and transient floating-body effects, clearly implying their influence on circuits, and thereby giving good insight into PD/SOI CMOS design issues. The article also notes special but practical device and circuit designs for controlling floating-body effects, showing through simulation how PD/SOI offers a significant performance advantage over bulk silicon in low-voltage applications, thereby conveying an assurance that reliable SOI CMOS design is feasible
Keywords :
CMOS integrated circuits; ULSI; integrated circuit design; silicon-on-insulator; transients; CMOS design; DC effects; SOI floating-body effects; ULSI; device physics; low-voltage applications; transient effects; CMOS process; CMOS technology; Circuit synthesis; Electric breakdown; Fabrication; MOS devices; MOSFETs; Partial discharges; Threshold voltage; Ultra large scale integration;
Journal_Title :
Circuits and Devices Magazine, IEEE
