A temperature all-silicon micro-sensor based on the thermo-optic effect

Author

Cocorullo, Giuseppe ; Della Corte, Francesco G. ; Iodice, Mario ; Rendina, Ivo ; Sarro, Pasqualina M.

Author_Institution

IRECE, CNR, Naples, Italy

Volume

44

Issue

5

fYear

1997

fDate

5/1/1997 12:00:00 AM

Firstpage

766

Lastpage

774

Abstract

A new class of temperature silicon micro-sensors, based on an interferometric optical technique, is presented. The sensing element consists of a planar Fabry-Perot cavity defined on a silicon wafer by highly anisotropic reactive ion etching, and is therefore suitable for full integration with other standard opto- and micro-electronic devices. Preliminary temperature measurements have been performed with the temperature resolutions predicted by the theory. The limit performances, in terms of resolution, speed of operation and energy dissipation of this class of sensors are discussed in detail. In particular, a final temperature resolution of 0.064°C is expected for a low loss interferometric cavity, with a settling time of 150 ns and a 0.2% readout error. An energy resolution as low as 30 nJ is also estimated

Keywords

Fabry-Perot resonators; arrays; elemental semiconductors; integrated optics; light interferometry; microsensors; optical fabrication; optical sensors; silicon; spectral methods of temperature measurement; sputter etching; temperature sensors; thermo-optical effects; 1.55 mum; 150 ns; Si; Si wafer; energy dissipation; energy resolution; full integration; highly anisotropic reactive ion etching; interferometer array; interferometric optical technique; limit performances; low loss interferometric cavity; planar Fabry-Perot cavity; readout error; settling time; speed of operation; temperature all-Si micro-sensor; temperature measurements; temperature resolution; thermo-optic effect; Anisotropic magnetoresistance; Energy resolution; Etching; Fabry-Perot; Geometrical optics; Optical interferometry; Optical sensors; Particle beam optics; Silicon; Temperature sensors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.568038

Filename

568038