DocumentCode
1417894
Title
Analysis of current conduction in short-channel accumulation-mode SOI PMOS devices
Author
Su, Ker-Wei ; Kuo, James B.
Author_Institution
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Volume
44
Issue
5
fYear
1997
fDate
5/1/1997 12:00:00 AM
Firstpage
832
Lastpage
840
Abstract
This paper reports a compact analytical current conduction model for short-channel accumulation-mode SOI PMOS devices. Based on the study, the current conduction mechanism in a short-channel accumulation-mode SOI PMOS device is different from that in a long-channel one. As verified by the experimental data, the compact analytical model considering channel length modulation and prepinchoff velocity saturation gives an accurate prediction of the drain current characteristics
Keywords
MOSFET; carrier mobility; current distribution; semiconductor device models; silicon-on-insulator; analytical current conduction model; carrier mobility; channel length modulation; current conduction mechanism; drain current characteristics; prepinchoff velocity saturation; short-channel accumulation-mode SOI PMOS devices; Analytical models; Circuits; Electron mobility; MOS devices; Permittivity; Semiconductor process modeling; Substrates; Thin film devices; Transistors; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.568046
Filename
568046
Link To Document