A new equivalent MOSFET representation of a HEMT to analytically model nonlinear charge control for simulation of HEMT devices and circuits

Author

Karmalkar, Shreepad

Author_Institution

Dept. of Electr. Eng., Indian Inst. of Technol., Madras, India

Volume

44

Issue

5

fYear

1997

fDate

5/1/1997 12:00:00 AM

Firstpage

862

Lastpage

868

Abstract

It is shown that, from the point of view of the behavior of the charge and position of the Two-Dimensional Electron Gas (2-DEG) as a function of gate-source and drain-source voltages, the complex High Electron Mobility Transistor (HEMT) can be regarded as a simple Buried-Channel (BC) MOSFET. Thus, the characteristics of a HEMT, namely channel charge and capacitance/transconductance as a function of gate voltage below and above threshold are akin those of a BC MOSFET. Hence, there are discrepancies in the conventional Surface Channel MOSFET-like approach to HEMT modeling. Existing simple BC MOSFET dc and ac models can be used for on-paper analysis and computer aided simulation of HEMT devices and circuits, if the HEMT is represented by an equivalent BC MOSFET as derived in this paper. The new representation can be useful for modeling of short-channel HEMT phenomena

Keywords

HEMT circuits; MOSFET; circuit analysis computing; high electron mobility transistors; semiconductor device models; AC model; DC model; HEMT circuit; HEMT device; analytical model; capacitance; computer simulation; equivalent buried-channel MOSFET; nonlinear charge control; short-channel phenomena; transconductance; two-dimensional electron gas; Analytical models; Capacitance; Circuit analysis computing; Computational modeling; Electron mobility; HEMTs; MODFETs; MOSFET circuits; Threshold voltage; Transconductance;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.568050

Filename

568050