Monolithic AlGaAs-GaAs HBT single- and dual-stage ultra-broadband amplifiers

Author

Ali, Fazal ; Ramachandran, Ravi ; Podell, Allen

Author_Institution

Pacific Monolithics, Sunnyvale, CA, USA

Volume

1

Issue

5

fYear

1991

fDate

5/1/1991 12:00:00 AM

Firstpage

107

Lastpage

109

Abstract

The circuit design and performance of single- and dual-stage ultra-wideband monolithic microwave integrated circuit (MMIC) amplifiers using AlGaAs-GaAs heterojunction bipolar transistors (HBTs) are presented. The single-stage feedback amplifier has 10 dB of gain and a 3-dB bandwidth of DC to 18 GHz. The two-stage AC-coupled version achieves over 20 dB of gain and has a 3-dB bandwidth of 0.1 to 18 GHz. These amplifiers are extremely small in size (single-stage: 24 mils*24 mils, two-stage: 24 mils*40 mils) since there are no reactive matching elements. This results in high chip yield and low cost.<>

Keywords

III-V semiconductors; MMIC; aluminium compounds; bipolar integrated circuits; feedback; gallium arsenide; heterojunction bipolar transistors; microwave amplifiers; wideband amplifiers; 10 dB; 18 GHz; 20 dB; AC-coupled version; AlGaAs-GaAs; HBT; MMIC; SHF; dual-stage; heterojunction bipolar transistors; monolithic microwave integrated circuit; single-stage feedback amplifier; two-stage; ultra-broadband amplifiers; ultrawideband type; Bandwidth; Bipolar integrated circuits; Circuit synthesis; Gain; Heterojunction bipolar transistors; MMICs; Microwave amplifiers; Microwave integrated circuits; Monolithic integrated circuits; Ultra wideband technology;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.89078

Filename

89078