Title :
Separating the influences of neutral base recombination and avalanche breakdown on base current reduction in SiGe HBT´s
Author_Institution :
Dept. of Electron. & Comput. Sci., Southampton Univ., UK
fDate :
5/1/1997 12:00:00 AM
Abstract :
A simple experimental procedure is proposed to determine the separate ranges of reverse collector-base bias where neutral base recombination and avalanche breakdown, respectively, dominate base current reduction in silicon germanium heterojunction bipolar transistors (SiGe HBTs) which exhibit significant neutral base recombination
Keywords :
Ge-Si alloys; avalanche breakdown; electron-hole recombination; heterojunction bipolar transistors; semiconductor materials; HBT; SiGe; avalanche breakdown; base current reduction; neutral base recombination; reverse collector-base bias; Analog circuits; Avalanche breakdown; Breakdown voltage; Doping; Germanium silicon alloys; Heterojunction bipolar transistors; Impurities; Photonic band gap; Silicon germanium; Space charge;
Journal_Title :
Electron Devices, IEEE Transactions on
