Title :
A super low-noise 0.1 μm T-gate InAlAs-InGaAs-InP HEMT
Author :
Duh, K.H.G. ; Chao, P.C. ; Liu, S.M.J. ; Ho, P. ; Kao, M.Y. ; Ballingall, J.M.
Author_Institution :
Gen. Electr. Co., Syracuse, NY, USA
fDate :
5/1/1991 12:00:00 AM
Abstract :
It is reported that 0.1-μm T-gate InAlAs-InGaAs-InP HEMTs have exhibited state-of-the-art noise and gain performance well up to 100 GHz. Minimum noise figures of 0.8 and 1.2 dB with gains of 8.9 and 7.2 dB have been measured at 60 and 94 GHz, respectively. A high-performance W-band three-stage amplifier has been built using these devices with noise figures between 3.2-3.5 dB and a gain of 17.5±0.4 dB from 91 to 96 GHz. A 6-dB improvement in the 1-dB compression characteristic of the amplifier had been achieved with a GaAs pseudomorphic HEMT in the third stage
Keywords :
III-V semiconductors; aluminium compounds; electron device noise; gallium arsenide; high electron mobility transistors; indium compounds; solid-state microwave devices; 0.1 micron; 0.8 to 1.2 dB; 100 GHz; 7.2 to 8.9 dB; HEMT; InAlAs-InGaAs-InP; MM-wave device; T-gate; W-band; submicron gate; super low-noise; three-stage amplifier; HEMTs; Impedance; Low-noise amplifiers; Noise figure; Noise measurement; Power measurement; Probes; Switches; Temperature; Testing;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
