Title :
Optimum collector width of VLSI bipolar transistors for maximum f max at high current densities
Author :
Kumar, M. Jagadesh ; Datta, Krishanu
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol., New Delhi, India
fDate :
5/1/1997 12:00:00 AM
Abstract :
A simple analytical model for optimum collector epi-layer thickness Wepi to maximize fmax of VLSI bipolar transistors having reach-through collector is reported. Numerical and analytical results for Wepi are compared to verify the validity of our model for the optimum collector epi-layer thickness at high current densities
Keywords :
VLSI; bipolar integrated circuits; bipolar transistors; electric breakdown; semiconductor device models; VLSI; analytical model; bipolar transistors; collector width; current densities; epi-layer thickness; reach-through collector; Analytical models; Bipolar transistors; Current density; Delay; Frequency; Heterojunction bipolar transistors; Kirk field collapse effect; Radiative recombination; Semiconductor devices; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
