DocumentCode :
1418099
Title :
Ultralow Switching Energy Ni/ 
/HfON/TaN RRAM
Author :
Cheng, C.H. ; Chin, Albert ; Yeh, F.S.
Author_Institution :
Dept. of Electron. Eng., Nat. Tsing-Hua Univ., Hsinchu, Taiwan
Volume :
32
Issue :
3
fYear :
2011
fDate :
3/1/2011 12:00:00 AM
Firstpage :
366
Lastpage :
368
Abstract :
Using stacked covalent-bond-dielectric GeOx, on metal-oxynitride HfON, the Ni/GeOx/HfON/TaN resistive random access memory (RRAM) showed ultralow set power of 0.3 μW (0.1 μA at 3 V), reset power of 0.6 nW (-0.3 nA at -1.8V), fast 20-ns switching time, ultralow 8-fJ switching energy (4-V overstress), and excellent 106 cycling endurance. Such excellent performance was reached by using hopping conduction with negative temperature coefficient (TC) rather than the positive TC in metal-oxide RRAM.
Keywords :
germanium compounds; hafnium compounds; nickel; random-access storage; tantalum compounds; Ni-GeOx-HfON-TaN; Ni/GeOx/HfON/TaN resistive random access memory; cycling endurance; energy 8 fJ; excellent performance; hopping conduction; metal-oxide RRAM; metal-oxynitride HfON; negative temperature coefficient; positive TC; power 0.3 muW; power 0.6 nW; stacked covalent-bond-dielectric GeOx; ultralow switching energy; $hbox{GeO}_{2}$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2010.2095820
Filename :
5680574
Link To Document :
