DocumentCode :
1418118
Title :
High-Performance Poly-Si Nanowire Thin-Film Transistors Using the 
Gate Dielectric
Author :
Lee, Chen-Ming ; Tsui, Bing-Yue
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
Volume :
32
Issue :
3
fYear :
2011
fDate :
3/1/2011 12:00:00 AM
Firstpage :
327
Lastpage :
329
Abstract :
High-performance polycrystalline-silicon (poly-Si) nanowire (NW) thin-film transistors (TFTs) using hafnium dioxide as gate dielectric is successfully fabricated for the first time. The excellent short-channel characteristics are attributed to the high- gate dielectric, ultrathin poly-Si NW channel thickness, and omega-shaped gate structure. The record high driving capability of 549 results from the ultrashort gate length , thin equivalent oxide thickness, and Ni silicide metal source/drain. This letter reveals the opportunity of high-performance poly-Si TFT circuits for system-on-panel and 3-D integrated circuit (3-D IC) applications.
Keywords :
nanowires; thin film transistors; three-dimensional integrated circuits; 3D IC application; 3D integrated circuit; Ni silicide metal source/drain; hafnium dioxide; high-gate dielectric; high-performance poly-Si TFT circuits; high-performance poly-Si nanowire thin-film transistors; high-performance polycrystalline-silicon nanowire; omega-shaped gate structure; short-channel characteristics; system-on-panel; thin equivalent oxide thickness; ultrashort gate length; ultrathin poly-Si NW channel thickness; High-dielectric-constant dielectric; nanowire (NW); polycrystalline silicon (poly-Si); thin-film transistor (TFT);
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2010.2095493
Filename :
5680577
Link To Document :
