Title :
Room-temperature photo-pumped operation of 1.58-μm vertical-cavity lasers fabricated on Si substrates using wafer bonding
Author :
Wada, H. ; Takamori, T. ; Kamijoh, T.
Author_Institution :
Semicond. Technol. Lab., Oki Electr. Ind. Co. Ltd., Tokyo, Japan
Abstract :
Long-wavelength vertical cavity lasers have been successfully fabricated on Si substrates using direct wafer bonding. InGaAs-InGaAsP multiquantum-well active layers with 40.5-pair InGaAsP-InP stacked mirrors have been directly bonded on 3.5-pair Al2O3/a-Si mirrors deposited on Si substrates. The sample has been optically pumped at room temperature and lasing operation at 1.58-μm has been achieved.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser cavity resonators; laser mirrors; laser transitions; optical fabrication; optical pumping; quantum well lasers; substrates; surface emitting lasers; wafer bonding; /spl mu/m vertical-cavity lasers fabrication; 1.58 mum; Al/sub 2/O/sub 3/; Al/sub 2/O/sub 3//a-Si mirrors; InGaAs-InGaAsP; InGaAs-InGaAsP multiquantum-well active layers; InGaAsP-InP; InGaAsP-InP stacked mirrors; Si; Si substrates; direct wafer bonding; lasing operation; long-wavelength vertical cavity lasers; optically pumped; room temperature; room-temperature photo-pumped operation; wafer bonding; Epitaxial growth; High speed optical techniques; Indium phosphide; Mirrors; Pump lasers; Quantum well devices; Substrates; Temperature; Vertical cavity surface emitting lasers; Wafer bonding;
Journal_Title :
Photonics Technology Letters, IEEE
