Photosensitivity of Field-Effect Transistors Based on ZnO Nanowire Networks

Author

Peng, Shi-Ming ; Su, Yan-Kuin ; Ji, Liang-Wen ; Young, Sheng-Joue ; Wu, Cheng-Zhi ; Cheng, Wei-Bin ; Chao, Wan-Chun ; Tsai, Chi-Nan

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

32

Issue

3

fYear

2011

fDate

3/1/2011 12:00:00 AM

Firstpage

339

Lastpage

341

Abstract

Self-assembling ordered ZnO nanowire (NW) network-based field-effect transistors (FETs) were fabricated by bottom-up photolithography. The devices had on/off ratios of >; 10⁴, mobilities of ~1.31 cm² V^-1 s^-1, mobilities of and threshold voltages of ~-1 V. Under UV treatment (340 nm, 57.46 ), the devices exhibited relative photoconductivity ratio increases of at a depletion state of 8 V gate bias (1.56 × 103 A/V). The fabricated FETs exhibit a broad range of electrical characteristics because of variation in the contact quality of the metal/NW, the dielectric/NW, and the NW/NW interfaces. However, the fabricated approach offers a cost-effective route to integrate self-assembled ZnO NW network-based FETs.

Keywords

II-VI semiconductors; field effect transistors; nanowires; photoconductivity; photolithography; self-assembly; ultraviolet lithography; wide band gap semiconductors; zinc compounds; FET; UV treatment; ZnO; bottom-up photolithography; cost-effective route; electrical characteristics; field-effect transistors; gate bias; photoconductivity ratio; photosensitivity; self-assembling ordered ZnO nanowire network; threshold voltages; voltage 8 V; wavelength 340 nm; Field-effect transistor (FET); ZnO nanowire; photosensitivity;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2094600

Filename

5680584