DocumentCode
1418174
Title
Contact Resistance to a One-Dimensional Quasi-Ballistic Nanotube/Wire
Author
Solomon, Paul M.
Author_Institution
T.J. Watson Res. Center, IBM, Yorktown Heights, NY, USA
Volume
32
Issue
3
fYear
2011
fDate
3/1/2011 12:00:00 AM
Firstpage
246
Lastpage
248
Abstract
A distributed contact model is presented for a 1-D quasi-ballistic conductor deriving a contact resistance versus contact length as a hyperbolic cotangent relationship in terms of the quantum of resistance, the coupling conductance gc of the contact, and the ballistic mean free path (λb). The model gave excellent fits to recent contact resistance-versus-contact length data for carbon nanotubes giving gc = 2 μS/nm and λb = 380 nm.
Keywords
ballistic transport; carbon nanotubes; carrier mean free path; contact resistance; field effect transistors; nanowires; 1D quasiballistic conductor; C; ballistic mean free path; carbon nanotubes; contact coupling conductance; contact length; contact model; contact resistance; hyperbolic cotangent relationship; one-dimensional quasiballistic nanotube; one-dimensional quasiballistic nanowire; Carbon nanotube (CNT); contact resistance; transmission-line model (TLM);
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2010.2095821
Filename
5680585
Link To Document