DocumentCode :
1418174
Title :
Contact Resistance to a One-Dimensional Quasi-Ballistic Nanotube/Wire
Author :
Solomon, Paul M.
Author_Institution :
T.J. Watson Res. Center, IBM, Yorktown Heights, NY, USA
Volume :
32
Issue :
3
fYear :
2011
fDate :
3/1/2011 12:00:00 AM
Firstpage :
246
Lastpage :
248
Abstract :
A distributed contact model is presented for a 1-D quasi-ballistic conductor deriving a contact resistance versus contact length as a hyperbolic cotangent relationship in terms of the quantum of resistance, the coupling conductance gc of the contact, and the ballistic mean free path (λb). The model gave excellent fits to recent contact resistance-versus-contact length data for carbon nanotubes giving gc = 2 μS/nm and λb = 380 nm.
Keywords :
ballistic transport; carbon nanotubes; carrier mean free path; contact resistance; field effect transistors; nanowires; 1D quasiballistic conductor; C; ballistic mean free path; carbon nanotubes; contact coupling conductance; contact length; contact model; contact resistance; hyperbolic cotangent relationship; one-dimensional quasiballistic nanotube; one-dimensional quasiballistic nanowire; Carbon nanotube (CNT); contact resistance; transmission-line model (TLM);
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2010.2095821
Filename :
5680585
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1418174
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