DocumentCode
1418178
Title
Increased threshold for the first-order lateral mode lasing in low-ridge waveguide high power QW lasers
Author
Xu, M.L. ; Tan, G.L. ; Clayton, R. ; Xu, J.M.
Author_Institution
Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada
Volume
8
Issue
11
fYear
1996
Firstpage
1444
Lastpage
1446
Abstract
A self-consistent two-dimensional model is extended to include two-mode operation and is applied to study the characteristics of ridge-waveguided high power InGaAs-GaAs quantum-well lasers. This work provides physical insight into the most recent experimental result that use low-ridges and thin p-claddings to give high single lateral mode output and a low threshold.
Keywords
III-V semiconductors; claddings; gallium arsenide; indium compounds; laser modes; laser theory; quantum well lasers; ridge waveguides; semiconductor device models; waveguide lasers; first-order lateral mode lasing; high single lateral mode output; increased threshold; low threshold; low-ridge waveguide high power QW lasers; ridge-waveguided high power InGaAs-GaAs quantum-well lasers; self-consistent two-dimensional model; thin p-claddings; two-mode operation; Beam steering; Laboratories; Laser modes; Laser theory; Optical design; Optical waveguides; Power lasers; Quantum well lasers; Semiconductor lasers; Waveguide lasers;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.541544
Filename
541544
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