Title :
Increased threshold for the first-order lateral mode lasing in low-ridge waveguide high power QW lasers
Author :
Xu, M.L. ; Tan, G.L. ; Clayton, R. ; Xu, J.M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada
Abstract :
A self-consistent two-dimensional model is extended to include two-mode operation and is applied to study the characteristics of ridge-waveguided high power InGaAs-GaAs quantum-well lasers. This work provides physical insight into the most recent experimental result that use low-ridges and thin p-claddings to give high single lateral mode output and a low threshold.
Keywords :
III-V semiconductors; claddings; gallium arsenide; indium compounds; laser modes; laser theory; quantum well lasers; ridge waveguides; semiconductor device models; waveguide lasers; first-order lateral mode lasing; high single lateral mode output; increased threshold; low threshold; low-ridge waveguide high power QW lasers; ridge-waveguided high power InGaAs-GaAs quantum-well lasers; self-consistent two-dimensional model; thin p-claddings; two-mode operation; Beam steering; Laboratories; Laser modes; Laser theory; Optical design; Optical waveguides; Power lasers; Quantum well lasers; Semiconductor lasers; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
