Title :
The Effect of Dynamic Bias Stress on the Photon-Enhanced Threshold Voltage Instability of Amorphous HfInZnO Thin-Film Transistors
Author :
Son, Kyoung-Seok ; Kim, Hyun-Suk ; Maeng, Wan-Joo ; Jung, Ji-Sim ; Lee, Kwang-Hee ; Kim, Tae-Sang ; Park, Joon Seok ; Kwon, Jang-Yeon ; Koo, Bonwon ; Lee, Sang-Yoon
Author_Institution :
Display Lab., Samsung Adv. Inst. of Technol., Yongin, South Korea
Abstract :
The electrical stability of amorphous HfInZnO (HIZO) thin-film transistors (TFTs) was investigated under static and dynamic stress conditions, with simultaneous visible light radiation. The extent of device degradation is found to be strongly sensitive to the gate voltage, pulse duty ratio, pulse frequency, and exposure to visible light. Dynamic stress experiments demonstrate that highly stable devices can be realized by adjusting the pulse duty ratio and frequency, which suggests that amorphous HIZO TFTs are a promising candidate of switching devices for large-area high-resolution AMLCD applications.
Keywords :
amorphous semiconductors; hafnium compounds; plasma CVD; stress effects; thin film transistors; HfInZnO; amorphous thin-film transistors; dynamic bias stress; electrical stability; gate voltage; large-area high-resolution AMLCD applications; photon-enhanced threshold voltage instability; pulse duty ratio; pulse frequency; visible light radiation; Dynamic stress; HfInZnO; instability; thin-film transistor (TFT);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2093867
