DocumentCode :
1418185
Title :
Optical modulation technique for carrier lifetime measurement in semiconductor lasers
Author :
Paoletti ; Meliga, M. ; Montrosset, I.
Author_Institution :
Centro Studi e Lab. Telecommun. SpA, Torino, Italy
Volume :
8
Issue :
11
fYear :
1996
Firstpage :
1447
Lastpage :
1449
Abstract :
We propose a new accurate method for differential carrier lifetime measurement, in which the laser under test biased below threshold is optically modulated. Experimental results are very reproducible and show very high signal-to-noise ratio, allowing also direct measurements of carrier density and transparency carrier density N/sub 0/. No additional technological process for the laser under test are required.
Keywords :
carrier density; carrier lifetime; electro-optical modulation; laser noise; optical testing; semiconductor device testing; semiconductor lasers; biased below threshold; carrier density; carrier lifetime measurement; differential carrier lifetime measurement; direct measurement; high signal-to-noise ratio; laser under test; optical modulation technique; optically modulated; semiconductor lasers; transparency carrier density; Charge carrier density; Charge carrier lifetime; Current measurement; Frequency measurement; Intensity modulation; Life testing; Optical modulation; Optical pumping; Semiconductor lasers; Signal to noise ratio;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/68.541545
Filename :
541545
Link To Document :
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