Title :
High-power 1.3-μm InGaAsP-InP amplifiers with tapered gain regions
Author :
Donnelly, J.P. ; Walpole, J.N. ; Betts, G.E. ; Groves, S.H. ; Woodhouse, J.D. ; O´Donnell, F.J. ; Missaggia, L.J. ; Bailey, R.J. ; Napoleone, A.
Author_Institution :
Lincoln Lab., MIT, Lexington, MA, USA
Abstract :
Tapered structures fabricated in InGaAsP-InP 1.3-μm quantum-well material have been evaluated as high-gain high-saturation-power amplifiers. The devices, which had a 1-mm-long ridge-waveguide input gain section followed by a 2-mm-long tapered section, demonstrated an unsaturated gain of 26 dB at 2.0 A and about 30 dB at 2.8 A. Saturated output power at 2.8 A was >750 mW. At 2.0-A drive current and /spl ap/10-mW input power, the relative intensity noise of the amplified signal was /spl les/-160 dB/Hz at frequencies /spl ges/2 GHz.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser noise; laser transitions; optical fabrication; optical saturation; quantum well lasers; ridge waveguides; waveguide lasers; 1 mm; 1.3 mum; 10 mW; 2 A; 2 GHz; 2 mm; 2.8 A; 750 mW; InGaAsP-InP; InGaAsP-InP 1.3-/spl mu/m quantum-well material; amplified signal; drive current; high-gain high-saturation-power amplifiers; high-power 1.3-/spl mu/m InGaAsP-InP laser amplifiers; mW input power; mm-long tapered section; relative intensity noise; saturated output power; tapered gain regions; tapered structures; unsaturated gain; Dry etching; High power amplifiers; Lenses; Optical fiber devices; Optical fiber polarization; Optical fiber testing; Power amplifiers; Power generation; Waveguide lasers; Wet etching;
Journal_Title :
Photonics Technology Letters, IEEE
