Title :
Planar 6H-SiC MESFETs with vanadium implanted channel termination
Author :
Lam, Man Pio ; Kornegay, Kevin T. ; Cooper, James A., Jr. ; Melloch, Michael R.
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
fDate :
5/1/1997 12:00:00 AM
Abstract :
We use vanadium ion implantation to form a highly resistive surface layer in the wide bandgap semiconductor silicon carbide (SiC). MESFETs are successfully fabricated using this highly resistive layer to isolate gate metal extensions along the channel width from the p-type epilayer. Fabrication and characterization of these devices are described in this paper
Keywords :
ion implantation; isolation technology; power MESFET; silicon compounds; vanadium; wide band gap semiconductors; SiC:V; V implanted channel termination; V ion implantation; characterization; fabrication; gate metal extensions isolation; highly resistive surface layer; planar 6H-SiC MESFET; wide bandgap semiconductor; Distributed parameter circuits; Electrical resistance measurement; Equivalent circuits; Gallium nitride; HEMTs; MESFETs; MODFET circuits; Optical materials; Silicon carbide; Transmission line measurements;
Journal_Title :
Electron Devices, IEEE Transactions on
