Title :
Modification of the Einstein equations of majority- and minority-carriers with band gap narrowing effect in n-type degenerate silicon with degenerate approximation and with non-parabolic energy bands
Author :
Xiao, Zhi-Xiong ; Wei, Tong-Li
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
fDate :
5/1/1997 12:00:00 AM
Abstract :
A new idea is presented for a modification of Einstein equations of the majority- and minority-carriers with the band gap narrowing effect in an n-type degenerate and uniformly-doped silicon with degenerate approximation and with nonparabolic energy bands. It may imply that the Einstein equation may be one factor for the increase of the minority-carrier diffusion coefficient at high doping levels
Keywords :
carrier density; carrier mobility; degenerate semiconductors; elemental semiconductors; energy gap; heavily doped semiconductors; minority carriers; silicon; Einstein equations; band gap narrowing effect; degenerate approximation; high doping levels; majority carriers; minority carriers; minority-carrier diffusion coefficient; n-type degenerate Si; nonparabolic energy bands; uniformly-doped Si; Charge carrier processes; Electron mobility; Energy states; Equations; Microelectronics; Photonic band gap; Semiconductor device doping; Semiconductor materials; Silicon; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
