Title :
Reliability modeling of HK MG technologies
Author :
Nigam, Tanya ; Kerber, Andreas
Author_Institution :
GLOBALFOUNDRIES, Santa Clara, CA, USA
Abstract :
It has been demonstrated that the introduction of HfO2 gate stacks into CMOS technologies provides the means to continue with traditional device gate length scaling. However, the introduction of HfO2 as a new gate dielectric into the gate stack of FETs brings about new challenges for understanding reliability physics and qualification. This review summarizes recent advances in the modeling of charge trapping and defect generation in HfO2 gate stacks. This paper relates the electrical properties to the chemical/physical properties of the high-κ dielectric and discusses implication for technology scaling.
Keywords :
CMOS integrated circuits; field effect transistors; hafnium compounds; high-k dielectric thin films; semiconductor device models; semiconductor device reliability; CMOS technologies; FET; HK MG technologies; HfO2; charge trapping; chemical properties; defect generation; electrical properties; gate dielectric; gate length scaling; gate stacks; high-κ dielectric; physical properties; reliability modeling; technology scaling; Charge carrier processes; Dielectrics; Hafnium compounds; Leakage currents; Logic gates; Stress; HK MG; HfO2; NBTI; PBTI; SILC; TDDB;
Conference_Titel :
Custom Integrated Circuits Conference (CICC), 2014 IEEE Proceedings of the
Conference_Location :
San Jose, CA
DOI :
10.1109/CICC.2014.6946002
