DocumentCode :
1418718
Title :
Microwave Performance of 
Double Heterojunction Bipolar Transistors
Author :
Mairiaux, E. ; Desplanque, L. ; Wallart, X. ; Zaknoune, M.
Author_Institution :
Inst. d´´Electron., de Microelectron. et de Nanotechnol., Villeneuve-d´´Ascq, France
Volume :
31
Issue :
4
fYear :
2010
fDate :
4/1/2010 12:00:00 AM
Firstpage :
299
Lastpage :
301
Abstract :
In this letter, we report on high-speed InAlAsSb/InGaSb/InAlAsSb double heterojunction bipolar transistors (HBTs) (DHBT) fabricated using a conventional triple-mesa process. Current gain cutoff frequencies fT of 52 GHz and maximum oscillation frequencies fMAX of 48 GHz were extracted from measured scattering parameters for devices with 1 ??15 ??m2 emitter size. To the best of our knowledge, these results are the first RF performance ever reported, and they demonstrate the feasibility and potential of InGaSb-based HBT for high-speed electronics applications.
Keywords :
aluminium compounds; arsenic compounds; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; millimetre wave bipolar transistors; semiconductor heterojunctions; DHBT; InAlAsSb-In0.35Ga0.65Sb; InGaSb-based HBT; RF performance; current gain cutoff frequency; double heterojunction bipolar transistors; emitter size; frequency 48 GHz; frequency 52 GHz; high-speed electronics; maximum oscillation frequency; microwave performance; radiofrequency performance; scattering parameters; size 1 mum; size 15 mum; triple-mesa process; Heterojunction bipolar transistors (HBTs); InGaSb; high-speed electronics;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2010.2040241
Filename :
5415559
Link To Document :
