A simple, continuous, analytical charge/capacitance model for the short-channel MOSFET

Author

Winton, Raymond S. ; Bandy, William R.

Author_Institution

Dept. of Electr. Eng., Mississippi State Univ., MS, USA

Volume

17

Issue

7

fYear

1998

fDate

7/1/1998 12:00:00 AM

Firstpage

631

Lastpage

638

Abstract

A charge/capacitance model of a simple form that is continuous across the linear and saturation regimes is developed. The model is based on a conductance analysis of the MOSFET which incorporates velocity saturation at a first-principles level. By relating charge layers within the device to characteristics of the conductance, the charge model not only is able to characterize C-V behavior but to also incorporate velocity saturation. Since the basic conductance form is a hyperbola, the model is mathematically simple and robust and yields MOSFET capacitances and charges which are continuous and of infinite differentiability over the linear and saturation regimes of device operation

Keywords

MOSFET; capacitance; semiconductor device models; C-V characteristics; analytical charge/capacitance model; conductance; short-channel MOSFET; velocity saturation; Capacitance; Capacitance-voltage characteristics; Circuit simulation; Equations; Knee; MOS devices; MOSFET circuits; Mathematical model; Robustness; Very large scale integration;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/43.709402

Filename

709402